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PDF JANSR2N7423 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7423 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | IRF | |
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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
PD-91299E
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9250 100K Rads (Si)
IRHM93250 300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID QPL Part Number
-14A JANSR2N7423
-14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rds(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-14
-9.0 A
-56
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
-14
15
-41
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
05/13/14
1 page  
Pre-Irradiation
IRHM9250, JANSR2N7423
8000
6000
4000
VCGissS
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds
SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
2000
Coss
Crss
0
1 10 100
-VDS , Drain-to-Source Voltage (V)
20 ID = -14 A
16
VVVDDDSSS
=
=
=
-160V
-100V
-40V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 50 100 150 200
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10 TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
-VSD ,Source-to-Drain Voltage (V)
3.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
DC
100 1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7423.PDF ] | |
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