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PDF MC4620 Data sheet ( Hoja de datos )
| Número de pieza | MC4620 | |
| Descripción | P & N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Freescale | |
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Freescale
AO4620/MC4620
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 40 @ VGS = 4.5V
31 @ VGS = 10V
-30 80 @ VGS = -4.5V
52 @ VGS = -10V
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
1
2
3
4
ID (A)
6.0
6.9
-4.2
-5.2
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
30 -30 V
±20 ±20
6.9 -5.2
5.4 -6.8 A
20 -20
Continuous Source Current (Diode Conduction)a
IS
1.3 -1.3 A
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
2.1 2.1
1.3 1.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
40
60
Units
oC/W
oC/W
1 www.freescale.net.cn
1 page  
Freescale
AO4620/MC4620
Typical Electrical Characteristics (P-Channel)
30
VGS = -10V
-6.0V
-5.0V
20
-4.0V
10
-3.0V
0
0123456
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
1.8
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
6 12 18 24
-ID, DRAIN CURRENT (A)
30
Figure 3. On Resistance Vs Vgs Voltage
10
ID = -5.7A
8
6
-15V
4
2
0
02468
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
10
15
VDS = -5V
12
9
TA = -55oC
25oC
125oC
6
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
800
700
f = 1 MHz
VGS = 0 V
600 CISS
500
400
300
200 COSS
100
CRSS
0
0 5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 4. Capacitance Characteristics
1.6
VGS = 10V
1.4 ID = 5.7A
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ Juncation Temperature (C)
Figure 6. On-Resistance Variation with Temperature
5 www.freescale.net.cn
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MC4620.PDF ] | |
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