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PDF 2SK3587-01MR Data sheet ( Hoja de datos )
| Número de pieza | 2SK3587-01MR | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3587-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
100
Unit
V
VDSX *5
70 V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±73
±292
A
A
Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
73 A
Drain(D)
Maximum Avalanche Energy
EAS *1
319.2
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
Operating and storage
PD Ta=25°C
Tc=25°C
Tch
2.16
95
+150
W
°C
Gate(G)
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2 kVrms
*1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch<=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C *4 VDS <=100V *5 VGS=-30V *6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V Tch=25°C
VDS=80V VGS=0V
VGS=±30V VDS=0V
ID=25A VGS=10V
Tch=125°C
ID=25A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=25A
VGS=10V
RGS=10 Ω
VCC=50V
ID=50A
VGS=10V
L=71.9µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
100 V
3.0 5.0 V
25 µA
250
10 100
nA
19 25 mΩ
15 30
S
1830 2745
pF
460 690
38 57
20 30 ns
35 53
50 75
23 35
52 78 nC
16 24
18 27
73 A
1.10 1.65 V
0.1 µs
0.4 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3587-01MR.PDF ] | |
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