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PDF SVD740T Data sheet ( Hoja de datos )

Número de pieza SVD740T
Descripción 400V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics 
Logotipo Silan Microelectronics Logotipo



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SVD740T/F_Datasheet
10A, 400V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD740T/F is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary S-
RinTM structure DMOS technology. The improved planar stripe cell
and the improved guard ring terminal have been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
10A,400V,RDS(on)typ=0.45 Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD740T
SVD740F
Package
TO-220-3L
TO-220F-3L
Marking
SVD740T
SVD740F
Material
Pb free
Pb free
Packing
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
EAS
TJ
Tstg
Rating
SVD740T
SVD740F
400
±30
10
160 52
1.28 0.42
384
-55+150
-55+150
Unit
V
V
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.29
Page 1 of 7

1 page




SVD740T pdf
SVD740T/F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
VDS
VGS
RG
10V
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.29
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