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Número de pieza | SVD1N60DTR | |
Descripción | 600V N-CHANNEL MOSFET | |
Fabricantes | Silan Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SVD1N60DTR (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 1A,600V,RDS(on)(typ.)=8.6Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD1N60M
SVD1N60M
SVD1N60T
SVD1N60B
SVD1N60BTR
SVD1N60D
SVD1N60DTR
Package
TO-251-3L
TO-251D-3L
TO-220-3L
TO-92-3L
TO-92-3L
TO-252-2L
TO-252-2L
Marking
SVD1N60M
SVD1N60M
SVD1N60T
1N60B
1N60B
SVD1N60D
SVD1N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Bulk
AMMO
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.28
Page 1 of 10
1 page SVD1N60M/T/B/D_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.28
Page 5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SVD1N60DTR.PDF ] |
Número de pieza | Descripción | Fabricantes |
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