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PDF SVF1N60MJ Data sheet ( Hoja de datos )
| Número de pieza | SVF1N60MJ | |
| Descripción | 600V N-CHANNEL MOSFET | |
| Fabricantes | Silan Microelectronics | |
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SVF1N60M/MJ/N/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVFM/MJ/N/B/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF1N60M
SVF1N60M
SVF1N60MJ
SVF1N60N
SVF1N60B
SVF1N60BTR
SVF1N60D
SVF1N60DTR
Package
TO-251-3L
TO-251D-3L
TO-251J-3L
TO-126-3L
TO-92-3L
TO-92-3L
TO-252-2L
TO-252-2L
Marking
SVF1N60M
SVF1N60M
SVF1N60MJ
SVF1N60N
F1N60
F1N60
SVF1N60D
SVF1N60D
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Bulk
Bulk
AMMO
Tube
Tape & Reel
REV:1.4
2012.06.04
Page 1 of 11
1 page  
SVF1N60M/MJ/N/B/D_Datasheet
TYPICAL CHARACTERISTICS（continued）
Figure 9-3. Max. Safe Operating
Area(SVF1N60MJ)
101
Operation in This Area is
Limited by RDS(ON)
100
100µs
1ms
10ms
10-1
10-2
100
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single
Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
1.0
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
Case Temperature – TC(°C)
Figure 9-4. Max. Safe Operating
Area(SVF1N60N)
101
Operation in This Area is
Limited by RDS(ON)
100
100µs
1ms
10ms
10-1
10-2
100
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2012.06.04
Page 5 of 11
5 Page 
SVF1N60M/MJ/N/B/D_Datasheet
Disclaimer:
• Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers!
ATTACHMENT
Revision History
Date
2011.03.30
2011.06.29
2011.09.02
REV
1.0
1.1
1.2
2011.12.31
1.3
2012.06.04
1.4
Description
Original
Add the package of TO-251D-3L, TO-251J-3L, TO-126-3L
Modify “PACKAGE OUTLINE”
Modify “ELECTRICAL CHARACTERISTICS” and the capacitance
characteristic curve; Modify the IDM of SVF1N60B
Modify the value of “Reverse Recovery Time”; Update the package outline
of TO-251D-3L
Page
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2012.06.04
Page 11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SVF1N60MJ.PDF ] | |
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