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PDF SVF1N60AM Data sheet ( Hoja de datos )

Número de pieza SVF1N60AM
Descripción 600V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics 
Logotipo Silan Microelectronics Logotipo



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SVF1N60AM/MJ/B/D/F/H_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
1A,600V,RDS(on)typ.=6.8@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF1N60AM
SVF1N60AMJ
SVF1N60ABTR
SVF1N60AD
SVF1N60ADTR
SVF1N60AF
SVF1N60AH
Package
TO-251D-3L
TO-251J-3L
TO-92-3L
TO-252-2L
TO-252-2L
TO-220F-3L
SOT-223-3L
Marking
SVF1N60AM
SVF1N60AMJ
1N60A
SVF1N60AD
SVF1N60AD
SVF1N60AF
SVF1N60AH
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
AMMO
Tube
Tape & Reel
Tube
Tape & Reel
REV:1.9
2012.07.27
Page 1 of 12

1 page




SVF1N60AM pdf
Silan
Microelectronics SVF1N60AM/MJ/B/D/F/H_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 9-3. Max. Safe Operating
Area(SVF1N60AF)
101
100
10-1
10-2
100
100µs
1ms
10ms
Operation in This Area
is Limited by RDS(ON)
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-5. Max. Safe Operating
Area(SVF1N60AMJ)
101
100
10-1
10-2
100
Operation in This Area
is Limited by RDS(ON)
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-4. Max. Safe Operating
Area(SVF1N60AH)
101
100
100µs
1ms
10ms
10-1
10-2
100
Operation in This Area
is Limited by RDS(ON)
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
1.0
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27
Page 5 of 12

5 Page





SVF1N60AM arduino
Silan
Microelectronics SVF1N60AM/MJ/B/D/F/H_Datasheet
PACKAGE OUTLINE (continued)
SOT-223-3L
5.906.70
3.00±0.20
0.30±0.10
UNIT: mm
0.25
2.30 TYP
4.60±0.15
0.70
+0.15
-0.10
010°
Disclaimer:
Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27
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