SVF1N60AH Datasheet PDF - Silan Microelectronics
| Part Number | SVF1N60AH | |
| Description | 600V N-CHANNEL MOSFET | |
| Manufacturers | Silan Microelectronics | |
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SVF1N60AM/MJ/B/D/F/H_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 1A,600V,RDS(on)（typ.）=6.8Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF1N60AM
SVF1N60AMJ
SVF1N60ABTR
SVF1N60AD
SVF1N60ADTR
SVF1N60AF
SVF1N60AH
Package
TO-251D-3L
TO-251J-3L
TO-92-3L
TO-252-2L
TO-252-2L
TO-220F-3L
SOT-223-3L
Marking
SVF1N60AM
SVF1N60AMJ
1N60A
SVF1N60AD
SVF1N60AD
SVF1N60AF
SVF1N60AH
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
AMMO
Tube
Tape & Reel
Tube
Tape & Reel
REV:1.9
2012.07.27
Page 1 of 12
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Silan
Microelectronics SVF1N60AM/MJ/B/D/F/H_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 9-3. Max. Safe Operating
Area(SVF1N60AF)
101
100
10-1
10-2
100
100µs
1ms
10ms
Operation in This Area
is Limited by RDS(ON)
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-5. Max. Safe Operating
Area(SVF1N60AMJ)
101
100
10-1
10-2
100
Operation in This Area
is Limited by RDS(ON)
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-4. Max. Safe Operating
Area(SVF1N60AH)
101
100
100µs
1ms
10ms
10-1
10-2
100
Operation in This Area
is Limited by RDS(ON)
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
1.0
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27
Page 5 of 12
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SVF1N60AH electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SVF1N60AH.PDF Datasheet ] | |
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