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PDF SVD2N60D Data sheet ( Hoja de datos )

Número de pieza SVD2N60D
Descripción 600V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics　
Logotipo Silan Microelectronics Logotipo



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SVD2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD2N60M
SVD2N60M
SVD2N60F
SVD2N60T
SVD2N60D
SVD2N60DTR
Package
TO-251-3L
TO-251D-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Marking
SVD2N60M
SVD2N60M
SVD2N60F
SVD2N60T
SVD2N60D
SVD2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2011.06.28
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SVD2N60D pdf
SVD2N60M/F/T/D_Datasheet
TYPICAL CHARACTERISTICS （continued）
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2011.06.28
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