|
|
PDF SVF7N60F Data sheet ( Hoja de datos )
| Número de pieza | SVF7N60F | |
| Descripción | 600V N-CHANNEL MOSFET | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SVF7N60F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
SVF7N60T/F_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 7A,600V,RDS(on)（typ）=1.0Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF7N60T
SVF7N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVF7N60T
SVF7N60F
Material
Pb free
Pb free
packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
Page 1 of 8
1 page  
SVF7N60T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF7N60T)
102 Operation in This Area is
Limited by RDS(ON)
100µs
101 1ms
10ms
DC
100
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
8
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=3.5A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
102
Area(SVF7N60F)
Operation in This Area is
Limited by RDS(ON)
100µs
101 1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
6
4
2
0
25 50 75 100 125 150
Case Temperature – TC(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVF7N60F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVF7N60F | 600V N-CHANNEL MOSFET | Silan Microelectronics |
| SVF7N60T | 600V N-CHANNEL MOSFET | Silan Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |