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Número de pieza | SVF8N60F | |
Descripción | 600V N-CHANNEL MOSFET | |
Fabricantes | Silan Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SVF8N60F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SVF8N60T/F_Datasheet
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guarding ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,600V,RDS(on)(typ.)=0.96Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF8N60T
SVF8N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVF8N60T
SVF8N60F
Material
Pb free
Pb free
packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.06.15
Page 1 of 8
1 page SVF8N60T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
1.2 vs. Temperature
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF8N60T)
102 Operation in This Area is
Limited by RDS(ON)
101
100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
8
6
4
2
0
25 50 75 100 125 150
Case Temperature – TC(°C)
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=4.0A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF8N60F)
102 Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.06.15
Page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SVF8N60F.PDF ] |
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