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PDF SVF10N60FG Data sheet ( Hoja de datos )

Número de pieza SVF10N60FG
Descripción 600V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics　
Logotipo Silan Microelectronics Logotipo



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SVF10N60T/F/FG/S/K_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N60T/F/FG/S/K is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N60T
SVF10N60F
SVF10N60FG
SVF10N60S
SVF10N60STR
SVF10N60K
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-263-2L
TO-263-2L
TO-262-3L
Marking
SVF10N60T
SVF10N60F
SVF10N60FG
SVF10N60S
SVF10N60S
SVF10N60K
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape &Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.5
2012.06.04
Page 1 of 9

1 page




SVF10N60FG pdf
SVF10N60T/F/FG/S/K_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.5
2012.06.04
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