|
|
PDF SVD1N80B Data sheet ( Hoja de datos )
| Número de pieza | SVD1N80B | |
| Descripción | 800V N-CHANNEL MOSFET | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SVD1N80B (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
SVD1N80B/F/M/T_Datasheet
1A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N80B/F/M/T is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
2
1
3 TO-220-3L
1.Gate 2.Drain 3.Source
TO-251-3L
TO-220F-3L
FEATURES
∗ 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
TO-92-3L
ORDERING INFORMATION
Part No.
SVD1N80M
SVD1N80T
SVD1N80B
SVD1N80BTR
SVD1N80F
Package
TO-251-3L
TO-220-3L
TO-92-3L
TO-92-3L
TO-220F-3L
Marking
SVD1N80M
SVD1N80T
1N80B
1N80B
SVD1N80F
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Bulk
AMMO
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
Page 1 of 10
1 page  
SVD1N80B/F/M/T_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 9-3. Max. Safe Operating Area(SVD1N80M)
101 Operation in This Area
is Limited by RDS(ON)
100µs
100 1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS, Drain Source Voltage[V]
103
Figure 10. Maximum Drain Current vs. Case
Temperature
1.0
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
TC, Case Temperature[°C]
Figure 9-4. Max. Safe Operating Area(SVD1N80T)
101 Operation in This Area
is Limited by RDS(ON)
100µs
100 1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS, Drain Source Voltage[V]
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SVD1N80B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVD1N80B | 800V N-CHANNEL MOSFET | Silan Microelectronics |
| SVD1N80B | 800V N-CHANNEL MOSFET | Silan Microelectronics |
| SVD1N80BTR | 800V N-CHANNEL MOSFET | Silan Microelectronics |
| SVD1N80F | 800V N-CHANNEL MOSFET | Silan Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |