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Numéro de référence | SVD1N80F | ||
Description | 800V N-CHANNEL MOSFET | ||
Fabricant | Silan Microelectronics | ||
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SVD1N80B/F/M/T_Datasheet
1A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N80B/F/M/T is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
2
1
3 TO-220-3L
1.Gate 2.Drain 3.Source
TO-251-3L
TO-220F-3L
FEATURES
∗ 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
TO-92-3L
ORDERING INFORMATION
Part No.
SVD1N80M
SVD1N80T
SVD1N80B
SVD1N80BTR
SVD1N80F
Package
TO-251-3L
TO-220-3L
TO-92-3L
TO-92-3L
TO-220F-3L
Marking
SVD1N80M
SVD1N80T
1N80B
1N80B
SVD1N80F
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Bulk
AMMO
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.17
Page 1 of 10
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Pages | Pages 10 | ||
Télécharger | [ SVD1N80F ] |
No | Description détaillée | Fabricant |
SVD1N80B | 800V N-CHANNEL MOSFET | Silan Microelectronics |
SVD1N80B | 800V N-CHANNEL MOSFET | Silan Microelectronics |
SVD1N80BTR | 800V N-CHANNEL MOSFET | Silan Microelectronics |
SVD1N80F | 800V N-CHANNEL MOSFET | Silan Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
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TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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