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PDF SVF7N65T Data sheet ( Hoja de datos )
| Número de pieza | SVF7N65T | |
| Descripción | 650V N-CHANNEL MOSFET | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
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SVF7N65T/F_Datasheet
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N65T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
ORDERING INFORMATION
Part No.
SVF7N65T
SVF7N65F
Package
TO-220-3L
TO-220F-3L
Package information.
Example:T:TO-220;F:TO-220F.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
Marking
SVF7N65T
SVF7N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.02.15
Page 1 of 8
1 page  
SVF7N65T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.02.15
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVF7N65T.PDF ] | |
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