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PDF SVD10N65T Data sheet ( Hoja de datos )

Número de pieza SVD10N65T
Descripción 650V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics　
Logotipo Silan Microelectronics Logotipo



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SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD10N65T
SVD10N65F
SVD10N65FG
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
Marking
SVD10N65T
SVD10N65F
SVD10N65FG
Material
Pb free
Pb free
Halogen free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2011.03.14
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SVD10N65T pdf
SVD10N65T/F(G)_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2011.03.14
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