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Número de pieza | SVD12N65T | |
Descripción | 650V N-CHANNEL MOSFET | |
Fabricantes | Silan Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SVD12N65T (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! SVD12N65T/F_Datasheet
12A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD12N65T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 12A,650V,RDS(on)(typ)=0.64Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVD12N65T
SVD12N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVD12N65T
SVD12N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2010.10.25
Page 1 of 9
1 page SVD12N65T/F_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 7. Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1
0.9
0.8
-100
Notes:
1. VGS = 0 V
2. ID = 250µA
-50 0
50 100
TJ, Junction Temperature[°C]
150
200
2.8
2.4
2
1.6
1.2
0.8
0.4
-100
Figure 8. On-resistance Variation vs
Temperature
Notes :
1. VGS = 10 V
2. ID = 6.0 A
-50 0
50 100 150
TJ, Junction Temperature[°C]
200
Figure 9-1. Max. Safe Operating Area(SVD12N65T)
102
100µs
101 1ms
10ms
DC
100
Operation in This Area
is Limited by RDS(ON)
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS,Drain-Source Voltage[V]
103
Figure 9-2. Max. Safe Operating Area(SVD12N65F)
102
100µs
101 1ms
10ms
100
Operation in This Area
is Limited by RDS(ON)
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
VDS,Drain-Source Voltage[V]
103
Figure 10. Maximum Drain Current vs. Case
Temperature
12
10
8
6
4
2
0
25
50 75 100 125
TC, Case Temperature[°C]
150
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2010.10.25
Page 5 of 9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SVD12N65T.PDF ] |
Número de pieza | Descripción | Fabricantes |
SVD12N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
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