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Número de pieza | NT4GC72C4PB0NL | |
Descripción | Registered DDR3 SDRAM DIMM | |
Fabricantes | Nanya Technology | |
Logotipo | ||
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No Preview Available ! NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die
Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500 PC3-10600
-BE -CG Unit
DIMM CAS Latency
79
fck – Clock Frequency
533 667 MHz
tck – Clock Cycle
1.875
1.5 ns
fDQ – DQ Burst Frequency 1066
1333
Mbps
• 240-Pin Registered Dual In-Line Memory Module (RDIMM)
• 2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on
256Mx8 DDR3 SDRAM B-Die devices
• 4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based
on 512Mx4 DDR3 SDRAM B-Die devices
• 16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP)
DDR3 SDRAM B-Die devices
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
•VDD = VDDQ = 1.5V ± 0.075V (for DDR3)
•VDD = VDDQ = 1.35V -0.0675/+0.1V (for DDR3L)
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Nominal and Dynamic On-Die Termination support
• Programmable Operation:
- DIMM Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device)
• 15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device)
• 15/11/2 (row/column/rank) Addressing for 8GB
• 15/11/4 (row/column/rank) Addressing for 16GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• SDRAMs are in 78-ball BGA Package
• RoHS compliance and Halogen free
Description
NT2GC72B89B0NJ, NT2GC72B89B2NJ, NT2GC72C89B0NJ, NT2GC72C89B2NJ, NT4GC72B4PB0NL, NT4GC72C4PB0NL,
NT4GC72C4PB2NL, NT4GC72B8PB0NL ,NT4GC72C8PB0NL , NT4GC72C8PB2NL, NT8GC72B4NB1NJ,
NT8GC72B4NB3NJ ,NT8GC72C4NB1NJ, NT8GC72C4NB3NJ, NT16TC72B4NB1NL, NT16TC72C4NB1NL and NT16TC72C4NB3NL
are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as one rank of
256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB) high-speed memory
array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA packaged devices, thirty-six
512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged devices. These DIMMs are
manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes
electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25”
long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.2
12/2010
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
1 page NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 1 of 2)
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
DQS8
DM8/DQS17
CB[7:0]
DQS
TDQS
DQ[7:0]
ZQ
D8
DQS4
DM4/DQS13
DQ[39:32]
DQS
TDQS
DQ[7:0]
ZQ
D4
DQS3
DM3/DQS12
DQ[31:24]
DQS
TDQS
DQ[7:0]
ZQ
D3
DQS5
DM5/DQS14
DQ[47:40]
DQS
TDQS
DQ[7:0]
ZQ
D5
DQS2
DM2/DQS11
DQ[23:16]
DQS
TDQS
DQ[7:0]
ZQ
D2
DQS6
DM6/DQS15
DQ[55:48]
DQS
TDQS
DQ[7:0]
ZQ
D6
DQS1
DM1/DQS10
DQ[15:8]
DQS
TDQS
DQ[7:0]
ZQ
D1
DQS7
DM7/DQS16
DQ[63:56]
DQS
TDQS
DQ[7:0]
ZQ
D7
DQS0
DM0/DQS9
DQ[7:0]
DQS
TDQS
DQ[7:0]
ZQ
D0
Vtt
VDDSPD
VDD
VTT
VREFCA
VREFDQ
VSS
SPD
D0-D8
D0-D8
D0-D8
D0-D8
D0-D8
Vtt SPD w/ Integrated Thermal Sensor
SCL
SA0
SA1
SA2
SCL
A0
A1
A2
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ resistors are 240Ω ±1%. For all other resistor values refer to the appropriate wiring diagram.
SDA
REV 1.2
12/2010
5
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
5 Page NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 3 of 3)
[4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
CS0_A: SDRAMs D[3:0], D[12:8], D17
CS0_B: SDRAMs D[7:4], D[16:13]
BA[2:0]
A[14:0]
CKE0
CKE1
ODT0
ODT1
CK0
CK1
120Ω
±1%
120Ω
±5%
PAR_IN
BA[2:0]A
BA[2:0]B
A[14:0]A
A[14:0]B
RCKE0A
RCKE0B
BA[2:0]: SDRAMs D[3:0], D[12:8],D17
BA[2:0]: SDRAMs D[7:4], D[16:13]
A[14:0]: SDRAMs D[3:0], D[12:8], D17
A[14:0]: SDRAMs D[7:4], D[16:13]
RAS: SDRAMs D[3:0], D[12:8], D17
RAS: SDRAMs D[7:4], D[16:13]
CAS: SDRAMs D[3:0], D[12:8], D17
CAS: SDRAMs D[7:4], D[16:13]
WE: SDRAMs D[3:0], D[12:8], D17
WE: SDRAMs D[7:4], D[16:13]
CKE0: SDRAMs D[3:0], D[12:8], D17
CKE0: SDRAMs D[7:4], D[16:13]
RODT0A
RODT0B
ODT0: SDRAMs D[3:0], D[12:8], D17
ODT0: SDRAMs D[7:4], D[16:13]
PCK0A
PCK0B
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
: SDRAMs D[17:0]
REV 1.2
12/2010
11
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet NT4GC72C4PB0NL.PDF ] |
Número de pieza | Descripción | Fabricantes |
NT4GC72C4PB0NL | Registered DDR3 SDRAM DIMM | Nanya Technology |
NT4GC72C4PB0NL-CG | Registered DDR3 SDRAM DIMM | Nanya Technology |
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