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KVR1333D3N9-8G fiches techniques PDF

Kingston - 8GB 2Rx8 1G x 64-Bit PC3-10600 CL9 240-Pin DIMM

Numéro de référence KVR1333D3N9-8G
Description 8GB 2Rx8 1G x 64-Bit PC3-10600 CL9 240-Pin DIMM
Fabricant Kingston 
Logo Kingston 





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KVR1333D3N9-8G fiche technique
Memory Module Specifications
KVR1333D3N9/8G
8GB 2Rx8 1G x 64-Bit PC3-10600
CL9 240-Pin DIMM
Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.
DESCRIPTION
This document describes ValueRAM's 1G x 64-bit (8GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, memory
module, based on sixteen 512M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as
follows:
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
9 cycles
49.5ns (min.)
260ns (min.)
36ns (min.)
2.460 W*
94 V - 0
0o C to 85o C
-55o C to +100o C
*Power will vary depending on the SDRAM used.
Continued >>
Document No. VALUERAM1031-001.B00 05/22/12 Page 1

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