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UPD42S17405 fiches techniques PDF

NEC - 16M-BIT DYNAMIC RAM

Numéro de référence UPD42S17405
Description 16M-BIT DYNAMIC RAM
Fabricant NEC 
Logo NEC 





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UPD42S17405 fiche technique
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD42S17405, 4217405
16 M-BIT DYNAMIC RAM
4 M-WORD BY 4-BIT, EDO
Description
The µPD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the µPD42S17405 can execute CAS before RAS self refresh.
The µPD42S17405, 4217405 are packaged in 26-pin plastic TSOP (II) and 26-pin plastic SOJ.
Features
• EDO (Hyper page mode)
• 4,194,304 words by 4 bits organization
• Single +5.0 V ±10 % power supply
• Fast access and cycle time
Part number
µPD42S17405-50, 4217405-50
µPD42S17405-60, 4217405-60
µPD42S17405-70, 4217405-70
Power
consumption
Active (MAX.)
660 mW
605 mW
550 mW
Access time
(MAX.)
R/W cycle time
(MIN.)
50 ns
60 ns
70 ns
84 ns
104 ns
124 ns
EDO (Hyper page mode)
cycle time (MIN.)
20 ns
25 ns
30 ns
µPD42S17405 can execute CAS before RAS self refresh
Part number
µPD42S17405
Refresh cycle
2,048 cycles/128 ms
µPD4217405
2,048 cycles/32 ms
Refresh
CAS before RAS self refresh
CAS before RAS refresh
RAS only refresh
Hidden refresh
CAS before RAS refresh
RAS only refresh
Hidden refresh
Power consumption
at standby (MAX.)
1.4 mW
(CMOS level input)
5.5 mW
(CMOS level input)
The information in this document is subject to change without notice.
Document No. M10067EJ6V0DS00 (6th edition)
Date Published January 1997 N
Printed in Japan
The mark shows major revised points.
©
1995

PagesPages 30
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