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PDF IXGH10N300 Data sheet ( Hoja de datos )
| Número de pieza | IXGH10N300 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS Corporation | |
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High Voltage IGBT
For Capacitor Discharge
Applications
Advance Technical Information
IXGH10N300
VCES =
IC90 =
V ≤CE(sat)
3000V
10A
3.5V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE= 20V, TVJ = 125°C, RG = 50Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
3000
3000
±20
±30
V
V
V
V
18 A
10 A
40 A
ICM = 32
@ ≤ 1250
100
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE= 0V
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 10A, VGE = 15V
IC = 30A
Characteristic Values
Min. Typ. Max.
3000
V
3.0 5.0 V
TJ = 125°C
25 μA
500 μA
±100 nA
3.5 V
5.2 V
TO-247 AD
G
CE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
High Peak Current Capability
Low Saturation Voltage
Low Gate Drive Requirement
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Applications
Capacitor Discharge
Pulser Circuits
Advantages
High Power Density
Easy to Mount
© 2009 IXYS CORPORATION, All Rights Reserved
DS100151(05/09)
1 page  
IXGH10N300
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
360
RG = 50Ω
320 VGE = 15V
VCE = 1250V
280
I C = 40A
240
200
160 I C = 20A
120
80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1,000
900
800
700
600
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGE = 15V
VCE = 1250V
I C = 40A
500
450
400
350
300
500 250
400 200
300 I C = 20A 150
200 100
100 50
00
50 100 150 200 250 300
RG - Ohms
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
1400
220
1200
1000
t f td(off) - - - -
RG = 50Ω, VGE = 15V
VCE = 1250V
200
180
800 160
600 140
400 120
200 100
TJ = 25ºC, 125ºC
0 80
10 15 20 25 30 35 40
IC - Amperes
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
320
RG = 50Ω
280 VGE = 15V
VCE = 1250V
240
200 TJ = 125ºC
160
120 TJ = 25ºC
80
40
10 15 20 25 30 35
IC - Amperes
40
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
700 200
t f td(off) - - - -
600
RG = 50Ω, VGE = 15V
180
VCE = 1250V
500 160
400
I C = 20A
140
300 120
200 100
I C = 40A
100 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
700 650
t r td(on) - - - -
600 TJ = 125ºC, VGE = 15V
VCE = 1250V
500
I C = 20A
550
450
400 350
300 250
200
I C = 40A
150
100
50
50
100 150 200 250 300
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_10N300(3P)5-05-09
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGH10N300.PDF ] | |
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