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PDF IXTV200N10TS Data sheet ( Hoja de datos )
| Número de pieza | IXTV200N10TS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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TrenchMVTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTV200N10T
IXTV200N10TS
VDSS =
ID25 =
RDS(on) ≤
100V
200A
5.5mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting force (PLUS220)
PLUS220 types
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
100
100
V
V
± 30 V
200 A
75 A
500 A
40 A
1.5 J
550 W
-55 ... +175
175
-55 ... +175
300
260
°C
°C
°C
°C
°C
11.65 / 2.5..14.6
N/lb.
4g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
4.5 5.5 mΩ
PLUS220 (IXFV)
GDS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99714A(10/08)
1 page  
IXTV200N10T
IXTV200N10TS
33
32
31
30
29
28
27
26
25
24
23
22
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
I D = 50A
RG = 3.3Ω
VGS = 10V
VDS = 50V
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
220
200
180
160
140
120
100
80
60
40
20
0
2
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 50A
I D = 25A
4 6 8 10 12 14 16 18
RG - Ohms
85
80
75
70
65
60
55
50
45
40
35
30
20
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38 80
t f td(off) - - - -
37
TJ = 125ºC
RG = 3.3Ω, VGS = 10V
75
36
VDS = 50V
70
35
34 TJ = 25ºC
33 TJ = 25ºC
65
60
55
32
31 TJ = 125ºC
50
45
30 40
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
34
33 RG = 3.3Ω
32 VGS = 10V
31 VDS = 50V
TJ = 25ºC
30
29
28
27
26 TJ = 125ºC
25
24
23
22
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
42
t f td(off) - - - -
40 RG = 3.3Ω, VGS = 10V
VDS = 50V
38
I D = 25A
75
70
65
36 60
34 55
32
I D = 50A
50
30 45
28 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
200
180
160
140
120
100
80
60
40
20
0
2
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 25A
I D = 50A
4 6 8 10 12 14 16 18
RG - Ohms
300
275
250
225
200
175
150
125
100
75
50
20
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_200N10T(6V)9-30-08-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTV200N10TS.PDF ] | |
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