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MBSK16M fiches techniques PDF

YANGJIE - Schottky Bridge Rectifier

Numéro de référence MBSK16M
Description Schottky Bridge Rectifier
Fabricant YANGJIE 
Logo YANGJIE 





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MBSK16M fiche technique
MBSK12M THRU MBSK110M
肖特基桥式整流器 Schottky Bridge Rectifier
■特征 Features
Io 1.0A
VRRM
20V~100V
肖特基芯片
Schottky chip
耐正向浪涌电流能力高
High surge forward current capability
低正向电压
Low VF
■用途 Applications
作一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
■极限值(绝对最大额定值)
■外形尺寸和印记 Outline Dimensions and Mark
MBM
.157(4.00) .287(7.3)
.142(3.60) .248(6.3)
.209(5.3)
.189(4.8)
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.053(1.53)
.037(0.95)
.013(0.33)
.0088(0.22)
.106(2.70)
.090(2.30)
.252(6.4)
.236(6.0)
.109(2.75)
.089(2.25)
Dimensions in inches and (millimeters)
Limiting ValuesAbsolute Maximum Rating
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
MBSK
12M 14M 16M 18M 110M
20 40 60 80 100
平均整流输出电流
Average Rectified Output
Current
IO A
60Hz正弦波,电阻负载,Ta=25
60Hz sine wave, R-load, Ta=25
1.0
正向(不重复)浪涌电流
Surge(Non-
IFSM
A
repetitive)Forward Current
60HZ正弦波,一个周期,Tj=25
60HZ sine wave, 1 cycle, Tj=25
正向浪涌电流的平方对电流
浪涌持续时间的积分值
I2t
A2S
1mst<8.3ms Tj=25℃,单个二极管
1mst<8.3ms Tj=25℃,Rating of per diode
Current Squared Time
存储温度
Storage Temperature
Tstg
结温
Junction Temperature
Tj
■电特性 (Ta=25℃ 除非另有规定)
Electrical CharacteristicsTa=25Unless otherwise specified
参数名称
符号 单位
测试条件
Item
Symbol Unit
Test Condition
40
6.6
-55 ~+150
-55 ~+150
最大值
Max
正向峰值电压
Peak Forward Voltage
IFM=0.5A, 脉冲测试,单个二极管的额定值
VFM V IFM=0.5A, Pulse measurement, Rating of per
diode
0.55
0.65
0.85
反向峰值电流
Peak Reverse Current
VRM=VRRM ,脉冲测试,单个二极管的额定值
IRRM mA VRM=VRRM , Pulse measurement, Rating of
per diode
0.5
热阻
Thermal Resistance
RθJ-A
RθJ-L
/W
结和环境之间,安装在玻璃-环氧基板上
Between junction and ambient, On glass-
epoxi substrate
结和引线之间
Between junction and lead
134
20
Document Number 0005
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

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