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Numéro de référence | MBSK12S | ||
Description | Schottky Bridge Rectifier | ||
Fabricant | LGE | ||
Logo | |||
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
Io 1.0A
VRRM 20V~100V
Schottky chip
High surge forward current capability
Low VF
Applications
General purpose 1 phase Bridge
rectifier applications
Limiting Values(Absolute Maximum Rating)
Item
Symbol Unit
Conditions
Repetitive Peak Reverse
Voltage
VRRM
V
4.6 0.2
MBS
3.8 0.2
0.6 0.1
2.5 0.25
1.0 0.15
6.8 0.2
0.3 0.1
Dimensions in millimeters
MBSK
12S 14S 16S 18S 110S
20 40 60 80 100
Average Rectified Output
Current
On alumina substrate
IO
A 60Hz sine wave,
R-load, Ta=25℃
On glass-epoxi substrate
Surge(Non-
repetitive)Forward Current
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
1.0
0.8
40
Current Squared Time
I2t A2S
1ms≤t<8.3ms Tj=25℃,Rating of per diode
6.6
Storage Temperature
Junction Temperature
Tstg ℃
Tj ℃
-55 ~+150
-55 ~+150
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Symbol Unit
VFM
V
Test Condition
IFM=0.5A,
Pulse measurement, Rating of per diode
Max
0.55 0.65 0.85
Peak Reverse Current
IRRM mA VRM=VRRM , Pulse measurement, Rating of per diode
0.5
Thermal Resistance
RθJ-A
Between junction and ambient, On alumina substrate
℃/W
Between junction and ambient, On glass-epoxi
substrate
RθJ-L
Between junction and lead
76
134
20
http://www.luguang.cn
mail:[email protected]
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Pages | Pages 2 | ||
Télécharger | [ MBSK12S ] |
No | Description détaillée | Fabricant |
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