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PDF Si2303 Data sheet ( Hoja de datos )
| Número de pieza | Si2303 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Tuofeng | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2303
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.240 @ VGS = –10 V
–30
0.460 @ VGS = –4.5 V
ID (A)b
–1.4
–1.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303DS (A3T)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS –30
V
VGS "20
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
TA= 25_C
ID
IDM
IS
–1.4
–1.3
–0.75
–10
–0.6
A
Power Dissipationb
TA= 25_C
PD
0.9
0.7 W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
Symbol
RthJA
Typical
115
140
Maximum
140
175
Unit
_C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet Si2303.PDF ] | |
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