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PDF BF8205T Data sheet ( Hoja de datos )
| Número de pieza | BF8205T | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | BYD Microelectronics | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF8205T
Dual N-Channel MOSFET
General Description
The BF8205T is a dual N-channel MOS Field Effect Transistor, Which
is applied to electronic systems as a power switch.
Features
• VDS (V) =20V
• Low on-state resistance
RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
Absolute Maximum Ratings (Tc = 25℃)
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)a
Total Power Dissipationb
Channel Temperature
Storage Temperature
Value
20
±12
5
20
2
150
-55~+150
Unit
V
V
A
A
W
℃
℃
Note a. PW<10us, Duty Cycle<1%, VGS=4.5V.
b. Mounted on ceramic substrate of 45 cm2x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Ordering Information
Part Number
BF8205T
Package
TSSOP8
Packaging
Tape & Reel
Datasheet
ES-BYD-WDZCE03D-069 Rev.A/1
Page 1 of 6
1 page  
BYD Microelectronics Co., Ltd.
Package Drawing
BF8205T
Dimensions
DIM
A A(1) A(2) B C
D E E1 e
Min. 1.05 0.05 0.99 0.19
2.9 6.2 4.3
MM Nom. 1.1 0.1 1.02 0.25 0.127 3
6.4
4.4
0.65
BSC
Max. 1.2 0.15 1.05 0.3
3.2 6.6 4.5
G L L1 a R S
0.254 0.45 0.9 0° 0.09 0.2
GAGE 0.6 1 4°
PLANE 0.75 1.1 8°
Datasheet
ES-BYD-WDZCE03D-069 Rev.A/1
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF8205T.PDF ] | |
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