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Alpha & Omega Semiconductors - 30V P-Channel MOSFET

Numéro de référence AO3407A
Description 30V P-Channel MOSFET
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AO3407A fiche technique
AO3407A
30V P-Channel MOSFET
General Description
The AO3407A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
-30V
-4.3A
< 48m
< 78m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-30
±20
-4.3
-3.5
-25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: Nov 2011
www.aosmd.com
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