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Número de pieza | IXGH60N60C3 | |
Descripción | High Speed PT IGBT | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! GenX3TM 600V
IGBT
High Speed PT IGBT for
40-100kHz Switching
IXGH60N60C3
VCES =
IC110 =
V ≤CE(sat)
tfi (typ) =
600V
60A
2.5V
50ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
75
60
360
40
400
ICM = 125
≤VCE VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 40A, VGE = 15V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
50 μA
1 mA
±100 nA
2.2 2.5 V
1.7 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS99928B(01/10)
1 page Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
4.0
3.5 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
3.0 VCE = 480V
2.5
I C = 80A
5.0
4.5
4.0
3.5
2.0 3.0
1.5 2.5
1.0
I C = 40A
2.0
0.5 1.5
0.0 1.0
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
3.5 4.0
3.0 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
2.5 VCE = 480V
2.0
I C = 80A
1.5
3.5
3.0
2.5
2.0
1.0
I C = 40A
0.5
1.5
1.0
0.0 0.5
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
180 140
160
tf
td(off) - - - -
130
RG = 3Ω , VGE = 15V
140
VCE = 480V
120
120
100 TJ = 125ºC
110
100
80 90
60
TJ = 25ºC
80
40 70
20 60
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH60N60C3
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4.0 4.0
3.5 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
3.0 VCE = 480V
2.5
2.0 TJ = 125ºC
3.5
3.0
2.5
2.0
1.5 1.5
1.0 1.0
TJ = 25ºC
0.5 0.5
0.0 0.0
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
170
160
t f td(off) - - - -
150 TJ = 125ºC, VGE = 15V
140 VCE = 480V
130
120
110 I C = 80A
100
90 I C = 40A
80
70
60
3 4 5 6 7 8 9 10 11 12 13 14
RG - Ohms
280
260
240
220
200
180
160
140
120
100
80
60
15
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
160
140 t f
td(off) - - - -
RG = 3Ω , VGE = 15V
120 VCE = 480V
I C = 80A
100
130
120
110
100
80 90
I C = 40A
60 80
40 70
20 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IXGH60N60C3.PDF ] |
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