|
|
Número de pieza | STS4DNF60 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STS4DNF60 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! STS4DNF60
N-channel 60V - 0.070Ω - 4A - SO-8
STripFET™ Power MOSFET
Features
Type
STS4DNF60
VDSS
60V
RDS(on)
<0.090Ω
ID
4A
■ Standard outline for easy automated surface
mount assembly
■ Low threshold drive
)Description
t(sThis Power MOSFET is the latest development of
ucSTMicroelectronics unique “single feature size”
dstrip-based process. The resulting transistor
roshows extremely high packing density for low on-
Presistance, rugged avalanche characteristics and
less critical alignment steps therefore a
teremarkable manufacturing reproducibility.
soleApplication
Ob■ Switching applications
SO-8
Figure 1. Internal schematic diagram
lete Product(s) -Table 1. Device summary
soOrder code
Ob STS4DNF60
Marking
4DF60
Package
SO-8
Packaging
Tape & reel
August 2007
Rev 2
1/12
www.st.com
12
1 page STS4DNF60
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD = 30V, ID = 2A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
VDD = 30V, ID = 2A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
Min. Typ. Max Unit
7 ns
18 ns
17 ns
6 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
4A
ISDM (1) Source-drain current (pulsed)
)VSD (2) Forward on voltage
ISD = 4A, VGS = 0
t(strr
cQrr
uIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 20V, Tj = 25°C
(see Figure 17)
rodtrr
Qrr
PIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see Figure 17)
te1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsole2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
16 A
1.2 V
45 ns
68 nC
3A
50 ns
88 nC
3.5 A
5/12
5 Page STS4DNF60
5 Revision history
Table 8. Revision history
Date
Revision
Changes
17-May-2007
1 First release
02-Aug-2007
2 Marking has been updated
Revision history
Obsolete Product(s) - Obsolete Product(s)
11/12
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet STS4DNF60.PDF ] |
Número de pieza | Descripción | Fabricantes |
STS4DNF60 | N-CHANNEL POWER MOSFET | STMicroelectronics |
STS4DNF60L | N-CHANNEL POWER MOSFET | ST Microelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |