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IRFH5053TRPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFH5053TRPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH5053TRPBF fiche technique
Applications
l 3 Phase Boost Converter Applications
l Secondary Side Synchronous Rectification
PD - 97359
IRFH5053PbF
VDSS
100V
HEXFET® Power MOSFET
RDS(on) max
Qg
18m@VGS = 10V 24nC
Benefits
l Very low RDS(ON) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
gRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
100
± 20
9.3
7.4
46
75
3.1
2.0
0.025
-55 to + 150
Typ.
–––
–––
Max.
1.6
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/16/08

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