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Número de pieza | IRFH5303PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
4.2 m:
15 nC
0.6 :
82 A
Applications
• Control MOSFET for high frequency buck converters
Features and Benefits
Features
Low charge (typical 15nC)
Low Rg (typical 0.6 Ω)
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5303PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5303TRPBF
IRFH5303TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
23
18
82
52
330
3.6
46
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014
1 page 20
ID = 49A
16
12
8
TJ = 125°C
4
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5303PbF
200
ID
TOP 6.7A
160 14A
BOTTOM 49A
120
80
40
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5303PBF.PDF ] |
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