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IRFR7440TRPbF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFR7440TRPbF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFR7440TRPbF fiche technique
StrongIRFET™
IRFR7440PbF
IRFU7440PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dv/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
max.
ID (Silicon Limited)
1.9mΩ
2.4mΩ
c180A
S
ID (Package Limited)
90A
DD
S
G
D-Pak
IRFR7440PbF
S
D
G
I-Pak
IRFU7440PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFR7440PbF
IRFU7440PbF
Package Type
D-PAK
I-PAK
Standard Pack
Form
Tube/Bulk
Tape and Reel
Tube/Bulk
Quantity
75
2000
75
Orderable Part Number
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
8
ID = 90A
6
4
TJ = 125°C
2
TJ = 25°C
0
4
8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
180
160
140
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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May 1, 2014

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