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PDF IRFH8330PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH8330PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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VDS
VGS max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
6.6
9.9
9.3
25i
V
V
mΩ
nC
A
Applications
• Control MOSFET for high frequency buck converters
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 3.6°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8330PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type
IRFH8330TRPBF
IRFH8330TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Source Bonding
cTechnology Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
17
14
56hi
36hi
25i
210
3.3
35
0.026
-55 to + 150
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
January 9, 2014
1 page  
25
ID = 20A
20
15
10 TJ = 125°C
5
TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH8330PbF
250
ID
TOP 4.5A
200 9.2A
BOTTOM 20A
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
5 www.irf.com © 2014 International Rectifier
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
Submit Datasheet Feedback
January 9, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFH8330PBF.PDF ] | |
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