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PDF IRFH9310TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH9310TRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@TA = 25°C)
-30 V
4.6 mΩ
110 nC
2.8 Ω
-21 A
6 mm
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
IRFH9310PbF
HEXFET® Power MOSFET
S
DS
DS
G
D
D
PQFN
5mm x 6mm
Features and Benefits
Features
Low RDSon (≤ 4.6mΩ)
Industry-Standard PQFN Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
⇒
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRFH9310TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Continuous Drain Current, VGS @ -10V (Package Limited)
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-21
-17
-107
- 86
-40
-170
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 26, 2014
1 page  
IRFH9310PbF
12
ID = -21A
10
8
6 TJ = 125°C
4
TJ = 25°C
2
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
800
ID
TOP -2.0A
-3.1A
600 BOTTOM -17A
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
10
8
Vgs = -4.5V
6
4
Vgs = -10V
2
0
0 20 40 60 80 100 120
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
50000
40000
30000
20000
10000
0
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1
Time (sec)
Fig 15. Typical Power vs. Time
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 26, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFH9310TRPBF.PDF ] | |
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