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IRLH7134TRPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLH7134TRPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRLH7134TRPBF fiche technique
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
40
3.3
39
50 i
V
mΩ
nC
A
IRLH7134PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (4.7mW @ VGS = 4.5V )
Low Thermal Resistance to PCB (< 1.2°C/W)
Lower Conduction Losses
Enables better thermal dissipation
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Multi-Vendor Compatibility
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRLH7134TRPBF
IRLH7134TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
40
± 16
26
21
134hi
85hi
50i
640
3.6
104
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
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May 13, 2014

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