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IRLR6225TRPbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLR6225TRPbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRLR6225TRPbF fiche technique
VDS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
RG (typical)
ID
Applications
Battery Protection Switch
20 V
4.0 m
5.2 m
48 nC
2.2
42h A
G
PD - 97594
IRLR6225PbF
HEXFET® Power MOSFET
DD
S
G
Gate
S
G
D-Pak
IRLR6225PbF
D
Drain
S
Source
Features and Benefits
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Multi-Vendor Compatibility
results in Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Notes  through † are on page 8
www.irf.com
Max.
20
±12
100h
63h
400
63
25
0.5
-55 to + 150
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
1
11/15/2010

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