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Número de pieza | AON2880 | |
Descripción | 20V Dual N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON2880 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AON2880
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON2880 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device contains two
MOSFETs arranged in a common-drain configuration to
facilitate bi-directional battery charge control with reverse
protection.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS = 2.5V)
20V
7A
< 21.5mΩ
< 30.0mΩ
ESD protected!
DFN2*2
Top View
Pin1
Top View
S2 1
G2 2
S1 3
G1 4
8
7
6
5
D
D
D
D
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
7
6
30
2.0
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47
70
32
Max
60
85
40
D
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : Jan 2011
www.aosmd.com
Page 1 of 5
1 page AON2880
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 1 : Jan 2011
www.aosmd.com
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AON2880.PDF ] |
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