|
|
PDF FDMA507PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA507PZ | |
| Descripción | Single P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDMA507PZ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
May 2010
FDMA507PZ
Single P-Channel PowerTrench® MOSFET
-20 V, -7.8 A, 24 mΩ
Features
General Description
Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A
Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A
Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A
Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A
Low Profile - 0.8 mm maximum - in the package MicroFET
2X2 mm
HBM ESD protection level > 3.2K V typical (Note3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.
The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-7.8
-24
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
507
Device
FDMA507PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 145 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMA507PZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDMA507PZ | Single P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |