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PDF 2SD1664 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1664 | |
| Descripción | NPN Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD1664
NPN Silicon
General Purpose Transistor
Features
R oH S C om pliant P roduct
SOT-89
D
D1
A
Power dissipation
PCM : 0.5 W (Tamb= 25oC)
Collector current
ICM : 1 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & Storage junction Temperature
Tj, Tstg : -55OC~ +150OC
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
b1
e
e1
b
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min Max
1.400 1.600
0.320 0.520
0.360 0.560
0.350 0.440
4.400 4.600
1.400 1.800
2.300 2.600
3.940 4.250
1.500TYP
2.900 3.100
0.900 1.100
C
Dimensions In Inches
Min Max
0.055 0.063
0.013 0.020
0.014 0.022
0.014 0.017
0.173 0.181
0.055 0.071
0.091 0.102
0.155 0.167
0.060TYP
0.114 0.122
0.035 0.043
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE (sat)
Transition frequency
fT
Output Capacitance
Cob
Test Conditions
Ic= 50AˈIE=0
Ic= 1mAˈIB=0
IE= 50AˈIC=0
VCB= 20 V, IE=0
VEB= 4V, IC=0
VCE= 3V, IC= 0.1A
IC= 500mA, IB= 50mA
VCE= 5V , IC= 50mA
f=1MHz
VCB= 10V, IE= 0
f=1MHz
MIN
40
32
5
82
TYP MAX
0.5
0.5
390
0.4
150
15
UNIT
V
V
V
A
A
V
MHz
pF
Classification of hFE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1664.PDF ] | |
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