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Número de pieza | STF32NM50N | |
Descripción | N-channel MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STB32NM50N, STF32NM50N,
STP32NM50N, STW32NM50N
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220, TO-247 packages
Datasheet — production data
Features
Order codes
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
VDS
RDS(on)
max.
500 V 0.13 Ω
ID PTOT
22 A
190 W
35 W
190 W
190 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TAB
2
3
1
D²PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ OR 4!"
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3
Table 1. Device summary
Order codes
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
Marking
32NM50N
Package
D2PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
Tube
Tube
August 2012
This is information on a product in full production.
Doc ID 023436 Rev 1
1/21
www.st.com
21
1 page STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 22 A, VGS = 0
-
-
22 A
88 A
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, VDD = 60 V
328
di/dt=100 A/µs
-5
(see Figure 20)
30.5
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
392
- 6.5
32.8
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Doc ID 023436 Rev 1
5/21
5 Page STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 24. D²PAK (TO-263) drawing
Package mechanical data
Figure 25. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
3.50
a. All dimensions are in millimeters
Doc ID 023436 Rev 1
Footprint
11/21
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet STF32NM50N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STF32NM50N | N-channel MOSFET | STMicroelectronics |
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