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PDF STW32N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STW32N65M5 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB32N65M5, STF32N65M5, STI32N65M5
STP32N65M5, STW32N65M5
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
Features
Order codes
STB32N65M5
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
VDSS@
TJmax
710 V
710 V
710 V
710 V
710 V
RDS(on) max
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
ID
24 A
24 A(1)
24 A
24 A
24 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
Applications
■ Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Package
STB32N65M5
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
October 2011
Doc ID 15316 Rev 4
3
!-V
Packaging
Tape and reel
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1/22
www.st.com
22
1 page  
STB/F/I/P/W32N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr
tc
tf
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 15 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
Min. Typ. Max. Unit
53 ns
12 ns
--
29 ns
16 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 24 A, VGS = 0
-
-
24 A
96 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 24 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
-
375
6
33
ns
µC
A
trr Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs
440
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-8
IRRM Reverse recovery current
(see Figure 21)
36
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15316 Rev 4
5/22
5 Page 
STB/F/I/P/W32N65M5
Table 8. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Package mechanical data
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 15316 Rev 4
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet STW32N65M5.PDF ] | |
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