DataSheetWiki


SiA432DJ fiches techniques PDF

Vishay - N-Channel 30 V (D-S) MOSFET

Numéro de référence SiA432DJ
Description N-Channel 30 V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





SiA432DJ fiche technique
www.vishay.com
SiA432DJ
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0200 at VGS = 10 V
0.0240 at VGS = 4.5 V
ID (A) b, c
10.1
9.2
Qg (TYP.)
5.6
PowerPAK® SC-70-6L Single
D
D6
S5
4
S
FEATURES
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
• 100 % UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
D
1 2.05 mm
Top View
2
3D
G
Bottom View
1
D
Marking Code: A L
Ordering Information:
SiA432DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA432DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 20
12 a
12 a
10.1 b, c
8.1 b, c
30
12 a
2.9 b, c
15.5
12
19.2
12.3
3.5 b, c
2.2 b, c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-0179-Rev. C, 10-Feb-14
1
Document Number: 68697
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 9
Télécharger [ SiA432DJ ]


Fiche technique recommandé

No Description détaillée Fabricant
SiA432DJ N-Channel 30 V (D-S) MOSFET Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche