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PDF SiA445EDJ Data sheet ( Hoja de datos )

Número de pieza SiA445EDJ
Descripción P-Channel 20 V (D-S) MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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New Product
P-Channel 20 V (D-S) MOSFET
SiA445EDJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
0.0165 at VGS = - 4.5 V
- 20 0.0185 at VGS = - 3.7 V
0.0300 at VGS = - 2.5 V
ID (A)
- 12a
- 12a
- 12a
Qg (Typ.)
23 nC
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Ordering Information:
SiA445EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing
- Battery Switch
- Charger Switch
- Load Switch
Marking Code
S
Part # code
BQX
XXX
Lot Traceability
and Date code
G
P-Channel MOSFET D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 12a
- 12a
- 11.8b, c
- 9.5b, c
- 50
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63619
www.vishay.com
S11-2525-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




SiA445EDJ pdf
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
SiA445EDJ
Vishay Siliconix
10 100 µs
1
0.1
TA = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
30
25
20
15
Package Limited
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
20
15
10
5
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63619
www.vishay.com
S11-2525-Rev. A, 26-Dec-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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