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PDF SiA461DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA461DJ | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiA461DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.033 at VGS = - 4.5 V
- 20 0.042 at VGS = - 2.5 V
0.055 at VGS = - 1.8 V
ID (A)a
- 12
- 12
- 12
Qg (Typ.)
18 nC
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Ordering Information:
SiA461DJ-T1-GE3 (Lead (Pb)-free and Halogen free)
FEATURES
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing
- Battery Switch
- Charger Switch
- Load Switch
(4) S
Marking Code
Part # code
BVX
XXXX
(3) G
Lot Traceability
and Date code
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
PD
TJ, Tstg
Limit
- 20
±8
- 12a
- 12a
- 8.3b, c
- 6.6b, c
- 20
- 12a
- 2.8b, c
17.9
11.4
3.4b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Notes:
t5s
Steady State
RthJA
RthJC
29
5.5
37 °C/W
7
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63838
For more information please contact: [email protected]
www.vishay.com
S12-0539-Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25 24
20
15
Package Limited
10
5
20
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0
SiA461DJ
Vishay Siliconix
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63838
For more information please contact: [email protected]
www.vishay.com
S12-0539-Rev. A, 12-Mar-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiA461DJ.PDF ] | |
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