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PDF SiA811ADJ Data sheet ( Hoja de datos )
| Número de pieza | SiA811ADJ | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
SiA811ADJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.116 at VGS = - 4.5 V
0.155 at VGS = - 2.5 V
0.205 at VGS = - 1.8 V
ID (A)a
- 4.5
- 4.5
- 4.5
Qg
4.9 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20 0.45 at 1 A
IF (A)a
2
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
RoHS
SC-70 Package
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• Cellular Charger Switch
• Asynchronous DC/DC for Portable Devices
• Load Switch for Portable Devices
S
K
1
A
2
NC
K
3
D
K
6
D
G
5
2.05 mm S
4
2.05 mm
0.75 mm
Marking Code
Part # Code
HD X
XXX
Lot Traceability
and Date Code
Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
- 20
20
±8
- 4.5a
- 4.5a
- 3.2b, c
- 2.6b, c
-8
- 4.5a
- 1.5b, c
2b
5
6.5
4.2
1.8b, c
1.1b, c
6.8
4.3
1.6b, c
1.0b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 68955
S-82482-Rev. A, 13-Oct-08
www.vishay.com
1
1 page  
New Product
SiA811ADJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10 0.5
0.4
ID = 2.8 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.4
1.2
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.0
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.3
ID = 250 µA
0.2
15
ID = 1 mA
0.1 10
0.0
- 0.1
5
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
* Limited by RDS(on)
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
Document Number: 68955
S-82482-Rev. A, 13-Oct-08
1 1 ms
10 ms
100 ms
0.1 1 s, 10 s
100 s, DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
5
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
0.300 (0.012)
2.500 (0.098)
0.350 (0.014)
0.325 (0.013)
0.613 (0.024)
0.275 (0.011)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.275 (0.011)
0.160 (0.006)
Return to Index
1
0.650 (0.026)
1.600 (0.063)
Dimensions in mm (inches)
www.vishay.com
1
Document Number: 70487
Revision: 18-Oct-13
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SiA811ADJ.PDF ] | |
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