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Vishay - N-Channel 30-V (D-S) MOSFET

Numéro de référence SiA814DJ
Description N-Channel 30-V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





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SiA814DJ fiche technique
New Product
SiA814DJ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.061 at VGS = 10 V
0.072 at VGS = 4.5 V
0.110 at VGS = 2.5 V
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
3.2 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
30 0.56 at 1 A
IF (A)a
2
PowerPAK SC-70-6 Dual
FEATURES
Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
RoHS
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• DC/DC Converter for Portable Devices
Load Switch for Portable Devices
1
A
2
NC
K
3
D
K
6D
G
5
2.05 mm S
4
2.05 mm
0.75 mm
Marking Code
Part # code
GBX
XXX
Lot Traceability
and Date code
Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
K
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
30
± 12
4.5a
4.5a
4.3b, c
3.4b, c
15
4.5a
1.6b, c
2b
3
6.5
5
1.9b, c
1.2b, c
6.8
4.3
1.6b, c
1.0b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
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