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PDF SiA907EDJT-T4-GE3 Data sheet ( Hoja de datos )
| Número de pieza | SiA907EDJT-T4-GE3 | |
| Descripción | Dual P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiA907EDJT
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.057 at VGS = -4.5 V
-20
0.095 at VGS = -2.5 V
ID (A)
-4.5 a
-4.5 a
Qg (TYP.)
4.9 nC
PowerPAK® SC-70-6L Dual
D1
G2 6
S2 5
4
D2
D1
1 2.05 mm
Top View
2
3 G1
D2
Bottom View
1
S1
Marking Code: DM
Ordering Information:
SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA907EDJT-T4-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Thermally enhanced Thin PowerPAK® SC-70
package
- Small footprint area
- Low on-resistance
• Typical ESD protection: 1500 V HBM
• High speed switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Charger Switch, Load Switch for Portable Devices
• Battery Management
S1 S2
G1 G2
P-Channel MOSFET
D1
P-Channel MOSFET
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT
-20
± 12
-4.5 a
-4.5 a
-4.5 a, b, c
-3.8 b, c
-15
-4.5 a
-1.6 b, c
7.8
5
1.9 b, c
1.2 b, c
-55 to 150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52
12.5
65
°C/W
16
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
S14-0624-Rev. B, 24-Mar-14
1
Document Number: 67874
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA907EDJT
Vishay Siliconix
100
Limited by RDS(on)*
10
100 μs
1 1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
12 8
10
6
8
6
Package Limited
4
2
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0624-Rev. B, 24-Mar-14
5
Document Number: 67874
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiA907EDJT-T4-GE3.PDF ] | |
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