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PDF TSF8N60M Data sheet ( Hoja de datos )
| Número de pieza | TSF8N60M | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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 1. N-Ch, MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de TSF8N60M (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TSP8N60M/TSF8N60M
600V N-Channel MOSFET
Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
ID
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5
seconds.
TSP8N60M TSF8N60M Units
600 V
7.5 7.5* A
4.5 4.5* A
30 30* A
±30 V
285 mJ
15.5 mJ
4.5 V/ns
165 55
W
1.21 0.4 W/°C
-55 ~ 150
300
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ
RθJA
Thermal Resistance, Junction-to-Ambient
TSP8N60M TSF8N60M Units
0.85
2.2 °C/W
0.5 -- °C/W
62.5
62.5 °C/W
1/7
1 page  
TSP8N60M/TSF8N60M
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSF8N60M.PDF ] | |
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