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Numéro de référence | BDT62 | ||
Description | Silicon PNP Darlington Power Transistors | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A;
-100V(Min)- BDT62B; -120V(Min)- BDT62C
·Complement to Type BDT63/A/B/C
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT62
-60
VCBO
Collector-Base
Voltage
BDT62A
BDT62B
-80
-100
V
BDT62C
-120
BDT62
-60
VCEO
Collector-Emitter
Voltage
BDT62A
BDT62B
-80
-100
V
BDT62C
-120
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
-15 A
IBB Base Current
Collector Power Dissipation
PC TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
-0.25
90
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.39
70
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BDT62 ] |
No | Description détaillée | Fabricant |
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