|
|
Número de pieza | SMM4F8.5A | |
Descripción | High junction temperature Transil | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SMM4F8.5A (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SMM4F
High junction temperature Transil™
Features
■ Typical peak pulse power:
www.DataSheet4U.com– 400 W (10/1000 µs)
– 2.4 kW (8/20 µs)
■ Stand off voltage range: from 5 V to 33 V
■ Unidirectional types
■ Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
■ Operating Tj max: 175 °C
■ JEDEC registered package outline
■ RoHS package
■ Halogen free molding compound
Complies with the following standards
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883G-Method 3015-7: class3
– 25 kV (human body model)
A
K
STmite flat
(DO222-AA)
Description
The SMM4F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 400 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provide a better
safety margin to protect sensitive circuits with
extended life time expectancy.
Packaged in STmite flat, this minimizes PCB
space consumption (footprint in accordance with
IPC 7531 standard).
December 2007
TM: Transil is a trademark of STMicroelectronics
Rev 2
1/10
www.st.com
10
1 page SMM4F
Characteristics
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
10000
1000
100
www.DataSheet4U.com
10
1
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
SMM4F5.0A
SMM4F15A
SMM4F24A
SMM4F33A
VR(V)
10
100
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
IFM(A)
1.0E+02
1.0E+01
1.0E+00
Tj =125 °C
1.0E-01
1.0E-02
0.0
Tj =25 °C
VFM(V)
0.5 1.0 1.5 2.0
2.5
3.0
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, SCu = 1 cm2)
Zth(j-a)/Rth(j-a)
1.00
On recommended pad
layout
0.10
0.01
0.00
1.0E-03
1.0E-02
1.0E-01
tp(S)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, eCu = 35 µm)
Rth(j-a)(°C/W)
200
180
160
140
120
100
80
60 SCU(cm2)
40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure 9.
Leakage current versus junction temperature (typical values)
IR(nA)
1.E+04
1.E+03
1.E+02
1.E+01
VBR≤11.7V
VBR>11.7V
1.E+00
Tj(°C)
VR=VRM
1.E-01
25 50 75 100 125 150 175
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SMM4F8.5A.PDF ] |
Número de pieza | Descripción | Fabricantes |
SMM4F8.5A | High junction temperature Transil | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |